symbol v ds v gs i dm t j , t stg symbol ty p max 73 90 96 125 r jl 63 75 junction and storage temperature range a p d c 1.4 0.9 -55 to 150 t a =70c i d -6.5 -5 -60 pulsed drain current c power dissipation b t a =25c continuous drain current maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted v v 8 gate-source voltage drain-source voltage -12 c/w maximum junction-to-ambient ad steady-state c/w w maximum junction-to-lead steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r ja AO8807 dual p-channel enhancement mode field effect transistor features v ds (v) = -12v i d = -6.5 a (v gs = -4.5v) r ds(on) < 20m ? (v gs = -4.5v) r ds(on) < 24m ? (v gs = -2.5v) r ds(on) < 30m ? (v gs = -1.8v) esd protected! general description the AO8807 uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 1.8v. this device is suitable for use as a load switch. AO8807 and AO8807l are electrically identical. - rohs compliant -halogen free g1 s1 s1 d1 g2 s2 s2 1 2 3 4 8 7 6 5 tssop-8 top view d2 g1 d1 s1 rg g2 d2 s2 rg alpha & omega semiconductor, ltd. www.aosmd.com
AO8807 symbol min typ max units bv dss -12 v -1 t j =55c -5 i gss 10 ? ? ? ? s drain-source breakdown voltage on state drain current i d =-250 a, v gs =0v v gs =-1.5v, i d =-5a v gs =-4.5v, v ds =-5v v gs =-4.5v, i d =-6.5a reverse transfer capacitance electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss a gate threshold voltage v ds =v gs i d =-250 a v ds =-12v, v gs =0v zero gate voltage drain current v ds =0v, v gs =8v gate-body leakage current m ? v gs =-2.5v, i d =-6a i s =-1a,v gs =0v v ds =-5v, i d =-6.5a v gs =-1.8v, i d =-5.5a i f =-6.5a, di/dt=100a/ s v gs =0v, v ds =-6v, f=1mhz switching parameters total gate charge v gs =-4.5v, v ds =-6v, i d =-6.5a gate source charge gate drain charge turn-on rise time turn-off delay time v gs =-4.5v, v ds =-6v, r l =0.9 ? , r gen =3 ? turn-off fall time maximum body-diode continuous current input capacitance output capacitance turn-on delay time dynamic parameters gate resistance v gs =0v, v ds =0v, f=1mhz r ds(on) static drain-source on-resistance forward transconductance diode forward voltage a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junction temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperature of t j(max) =150c. the soa curve provides a single pulse rating. rev1 :april 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AO8807 typical electrical and thermal characteristic s 0 10 20 30 40 50 60 012345 -v ds (volts) figure 1: on-region characteristics(note e) -i d (a) v gs =-1.5v -2v -3v -4.5v -2.5v 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics(note e) -i d (a) 10 15 20 25 30 35 40 45 0 2 4 6 8 101214161820 -i d (a) figure 3: on-resistance vs. drain current and gate voltage(note e) r ds(on) (m ? ) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics(note e) -i s (a) 25c 125c 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature(note e) normalized on-resistance i d =-6a, v gs =-2.5v i d =-5.5a, v gs =-1.8v i d =-5a, v gs =-1.5v 10 15 20 25 30 35 40 45 50 02468 -v gs (volts) figure 5: on-resistance vs. gate-source voltage(note e) r ds(on) (m ? ) i d =-6.5a 25c 125c 25c 125c v ds =-5v v gs =-1.5v v gs =-1.8v v gs =-4.5v i d =-6.5a, v gs =-4.5v v gs =-2.5v alpha & omega semiconductor, ltd. www.aosmd.com
AO8807 typical electrical and thermal characteristic s 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 048121620 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 400 800 1200 1600 2000 2400 2800 024681012 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss 0 20 40 60 80 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 10: single pulse power rating junction-to - ambient (note f) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance(note f) z ja normalized transient thermal resistance single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =125c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v ds =-6v i d =-6.5a t j(max) =150c t a =25c 0 0 1 10 100 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 s 1s 10s alpha & omega semiconductor, ltd. www.aosmd.com
AO8807 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms tt r d(on) t on t d(off) t f t off - + ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i alpha & omega semiconductor, ltd. www.aosmd.com
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